bas 21u apr-16-1999 1 silicon switching diode array for high-speed switching applications internal (galvanic) isolated diodes in one package vpw09197 1 2 3 4 5 6 eha07291 6 54 3 2 1 c1 c2 c3 a3 a2 a1 type marking package pin configuration 6=c1 1=a1 3=a3 4=c3 2=a2 jss sc-74 bas 21u 5=c2 maximum ratings parameter symbol value unit diode reverse voltage v r 200 v peak reverse voltage v rm 250 forward current i f 250 ma forward surge current, t p = 10 s i fs 4 a total power dissipation , t s = 122 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction - ambient 1) r thja 380 k/w junction - soldering point r thjs 110 k/w 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bas 21u apr-16-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. dc characteristics v (br) 250 - - breakdown voltage i (br) = 100 a v v f - - 1 1.25 - - forward voltage i f = 100 ma i f = 200 ma i r - 100 na - reverse current v r = 250 v i r - - a 100 reverse current v r = 250 v, t a = 150 c ac characteristics pf 5 - - c d diode capacitance v r = 0 v, f = 1 mhz ns reverse recovery time i f = 30 ma, i r = 30 ma, r l = 100 , measured at i r = 3ma - - t rr 50 test circuit for reverse recovery time ehn00016 f d.u.t. oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 oscillograph: r = 50 , t r = 0.35ns, c 1pf
bas 21u apr-16-1999 3 forward current i f = f ( v f ) t a = 25c 0.0 0 ehb00028 bas 19...21 v f f 100 200 300 400 500 600 700 ma 800 0.5 1.0 v 1.5 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 15 30 45 60 75 90 105 120 c 150 t a ,t s 0 50 100 150 ma 250 i f t s t a permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 i fmax / i fdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
bas 21u apr-16-1999 4 reverse current i r = f ( t a ) 10 0 50 100 150 bas 19...21 ehb00027 t a r ?c 0 -2 5 5 5 max typ. a 10 -1 10 10 1 10 2 forward voltage v f = f ( t a ) 0.0 0 bas 19...21 ehb00029 t a v f ? c 0.5 1.0 v 1.5 50 100 150 f = 625 ma ma 250 100 ma 10 ma
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